Characterization upon electrical hysteresis and thermal diffusion of TiAl(3)O(x )dielectric film

In this paper, we have investigated the electrical properties of TiAl(3)O(x )film as electrical gate insulator deposited by pulsed laser deposition and presented a simple method to describe the thermal diffusion behaviors of metal atoms at TiAl(3)O(x)/Si interfacial region in detail. The TiAl(3)O(x...

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Detalles Bibliográficos
Autores principales: Shi, Lei, Liu, Zhiguo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212093/
https://www.ncbi.nlm.nih.gov/pubmed/22011364
http://dx.doi.org/10.1186/1556-276X-6-557

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212093/
https://www.ncbi.nlm.nih.gov/pubmed/22011364
http://dx.doi.org/10.1186/1556-276X-6-557

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