Characterization upon electrical hysteresis and thermal diffusion of TiAl(3)O(x )dielectric film

In this paper, we have investigated the electrical properties of TiAl(3)O(x )film as electrical gate insulator deposited by pulsed laser deposition and presented a simple method to describe the thermal diffusion behaviors of metal atoms at TiAl(3)O(x)/Si interfacial region in detail. The TiAl(3)O(x )films show obvious electrical hysteresis by the capacitance-voltage measurements after post-annealing treatment. By virtue of the diffusion models composed of TiAl(3)O(x )film and silicon, the diffusion coefficient and the diffusion activation energy of the Ti and Al atoms are extracted. It is valuable to further investigate the pseudobinary oxide system in practice. PACS: 77.55.-g; 81.15.Fg; 81.40.Gh.