Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots

In-situ annealing at a high temperature of 640°C was performed for a low temperature grown Si capping layer, which was grown at 300°C on SiGe self-assembled quantum dots with a thickness of 50 nm. Square nanopits, with a depth of about 8 nm and boundaries along 〈110〉, are formed in the Si capping la...

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Detalles Bibliográficos
Autores principales: Cui, Jian, Lin, Jian Hui, Wu, Yue Qin, Fan, Yong Liang, Zhong, Zhenyang, Yang, Xin Ju, Jiang, Zui Min
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212206/
https://www.ncbi.nlm.nih.gov/pubmed/27502681
http://dx.doi.org/10.1007/s11671-010-9811-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212206/
https://www.ncbi.nlm.nih.gov/pubmed/27502681
http://dx.doi.org/10.1007/s11671-010-9811-y

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