n-Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires

In this letter, n-type doping of GaAs nanowires grown by metal–organic vapor phase epitaxy in the vapor–liquid–solid growth mode on (111)B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of...

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Detalles Bibliográficos
Autores principales: Gutsche, Christoph, Lysov, Andrey, Regolin, Ingo, Blekker, Kai, Prost, Werner, Tegude, Franz-Josef
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212212/
https://www.ncbi.nlm.nih.gov/pubmed/27502686
http://dx.doi.org/10.1007/s11671-010-9815-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212212/
https://www.ncbi.nlm.nih.gov/pubmed/27502686
http://dx.doi.org/10.1007/s11671-010-9815-7

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