Cargando…
Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells
We study the effects of low-temperature capping (200-450°C) on the optical properties of GaAs/AlGaAs quantum wells. Photoluminescence measurements clearly show the formation of abundant nonradiative recombination centers in an AlGaAs capping layer grown at 200°C, while there is a slight degradation...
| Autores principales: | , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2011
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212224/ https://www.ncbi.nlm.nih.gov/pubmed/21711596 http://dx.doi.org/10.1186/1556-276X-6-76 |