Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells

We study the effects of low-temperature capping (200-450°C) on the optical properties of GaAs/AlGaAs quantum wells. Photoluminescence measurements clearly show the formation of abundant nonradiative recombination centers in an AlGaAs capping layer grown at 200°C, while there is a slight degradation...

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Detalles Bibliográficos
Autores principales: Jo, Masafumi, Duan, Guotao, Mano, Takaaki, Sakoda, Kazuaki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212224/
https://www.ncbi.nlm.nih.gov/pubmed/21711596
http://dx.doi.org/10.1186/1556-276X-6-76
Descripción
Sumario:We study the effects of low-temperature capping (200-450°C) on the optical properties of GaAs/AlGaAs quantum wells. Photoluminescence measurements clearly show the formation of abundant nonradiative recombination centers in an AlGaAs capping layer grown at 200°C, while there is a slight degradation of the optical quality in AlGaAs capping layers grown at temperatures above 350°C compared to that of a high-temperature capping layer. In addition, the optical quality can be restored by post-growth annealing without any structural change, except for the 200°C-capped sample.

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