Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells

We study the effects of low-temperature capping (200-450°C) on the optical properties of GaAs/AlGaAs quantum wells. Photoluminescence measurements clearly show the formation of abundant nonradiative recombination centers in an AlGaAs capping layer grown at 200°C, while there is a slight degradation...

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Detalles Bibliográficos
Autores principales: Jo, Masafumi, Duan, Guotao, Mano, Takaaki, Sakoda, Kazuaki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212224/
https://www.ncbi.nlm.nih.gov/pubmed/21711596
http://dx.doi.org/10.1186/1556-276X-6-76
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author Jo, Masafumi
Duan, Guotao
Mano, Takaaki
Sakoda, Kazuaki
author_facet Jo, Masafumi
Duan, Guotao
Mano, Takaaki
Sakoda, Kazuaki
author_sort Jo, Masafumi
collection PubMed
description We study the effects of low-temperature capping (200-450°C) on the optical properties of GaAs/AlGaAs quantum wells. Photoluminescence measurements clearly show the formation of abundant nonradiative recombination centers in an AlGaAs capping layer grown at 200°C, while there is a slight degradation of the optical quality in AlGaAs capping layers grown at temperatures above 350°C compared to that of a high-temperature capping layer. In addition, the optical quality can be restored by post-growth annealing without any structural change, except for the 200°C-capped sample.
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spelling pubmed-32122242011-11-09 Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells Jo, Masafumi Duan, Guotao Mano, Takaaki Sakoda, Kazuaki Nanoscale Res Lett Nano Express We study the effects of low-temperature capping (200-450°C) on the optical properties of GaAs/AlGaAs quantum wells. Photoluminescence measurements clearly show the formation of abundant nonradiative recombination centers in an AlGaAs capping layer grown at 200°C, while there is a slight degradation of the optical quality in AlGaAs capping layers grown at temperatures above 350°C compared to that of a high-temperature capping layer. In addition, the optical quality can be restored by post-growth annealing without any structural change, except for the 200°C-capped sample. Springer 2011-01-12 /pmc/articles/PMC3212224/ /pubmed/21711596 http://dx.doi.org/10.1186/1556-276X-6-76 Text en Copyright ©2011 Jo et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Jo, Masafumi
Duan, Guotao
Mano, Takaaki
Sakoda, Kazuaki
Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells
title Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells
title_full Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells
title_fullStr Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells
title_full_unstemmed Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells
title_short Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells
title_sort effects of low-temperature capping on the optical properties of gaas/algaas quantum wells
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212224/
https://www.ncbi.nlm.nih.gov/pubmed/21711596
http://dx.doi.org/10.1186/1556-276X-6-76
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