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Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells

We study the effects of low-temperature capping (200-450°C) on the optical properties of GaAs/AlGaAs quantum wells. Photoluminescence measurements clearly show the formation of abundant nonradiative recombination centers in an AlGaAs capping layer grown at 200°C, while there is a slight degradation...

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Detalles Bibliográficos
Autores principales:	Jo, Masafumi, Duan, Guotao, Mano, Takaaki, Sakoda, Kazuaki
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer 2011
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212224/ https://www.ncbi.nlm.nih.gov/pubmed/21711596 http://dx.doi.org/10.1186/1556-276X-6-76

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