GaN nanorods grown on Si (111) substrates and exciton localization

We have investigated exciton localization in binary GaN nanorods using micro- and time-resolved photoluminescence measurements. The temperature dependence of the photoluminescence has been measured, and several phonon replicas have been observed at the lower energy side of the exciton bound to basal...

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Detalles Bibliográficos
Autores principales: Park, Young S, Holmes, Mark J, Shon, Y, Yoon, Im Taek, Im, Hyunsik, Taylor, Robert A
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212230/
https://www.ncbi.nlm.nih.gov/pubmed/21711583
http://dx.doi.org/10.1186/1556-276X-6-81

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212230/
https://www.ncbi.nlm.nih.gov/pubmed/21711583
http://dx.doi.org/10.1186/1556-276X-6-81

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