Cargando…

GaN nanorods grown on Si (111) substrates and exciton localization

We have investigated exciton localization in binary GaN nanorods using micro- and time-resolved photoluminescence measurements. The temperature dependence of the photoluminescence has been measured, and several phonon replicas have been observed at the lower energy side of the exciton bound to basal...

Descripción completa

Detalles Bibliográficos
Autores principales: Park, Young S, Holmes, Mark J, Shon, Y, Yoon, Im Taek, Im, Hyunsik, Taylor, Robert A
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212230/
https://www.ncbi.nlm.nih.gov/pubmed/21711583
http://dx.doi.org/10.1186/1556-276X-6-81
Descripción
Sumario:We have investigated exciton localization in binary GaN nanorods using micro- and time-resolved photoluminescence measurements. The temperature dependence of the photoluminescence has been measured, and several phonon replicas have been observed at the lower energy side of the exciton bound to basal stacking faults (I(1)). By analyzing the Huang-Rhys parameters as a function of temperature, deduced from the phonon replica intensities, we have found that the excitons are strongly localized in the lower energy tails. The lifetimes of the I(1 )and I(2 )transitions were measured to be < 100 ps due to enhanced surface recombination. PACS: 78.47.+p, 78.55.-m, 78.55.Cr, 78.66.-w, 78.66.Fd