GaN nanorods grown on Si (111) substrates and exciton localization

We have investigated exciton localization in binary GaN nanorods using micro- and time-resolved photoluminescence measurements. The temperature dependence of the photoluminescence has been measured, and several phonon replicas have been observed at the lower energy side of the exciton bound to basal...

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Autores principales: Park, Young S, Holmes, Mark J, Shon, Y, Yoon, Im Taek, Im, Hyunsik, Taylor, Robert A
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212230/
https://www.ncbi.nlm.nih.gov/pubmed/21711583
http://dx.doi.org/10.1186/1556-276X-6-81
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author Park, Young S
Holmes, Mark J
Shon, Y
Yoon, Im Taek
Im, Hyunsik
Taylor, Robert A
author_facet Park, Young S
Holmes, Mark J
Shon, Y
Yoon, Im Taek
Im, Hyunsik
Taylor, Robert A
author_sort Park, Young S
collection PubMed
description We have investigated exciton localization in binary GaN nanorods using micro- and time-resolved photoluminescence measurements. The temperature dependence of the photoluminescence has been measured, and several phonon replicas have been observed at the lower energy side of the exciton bound to basal stacking faults (I(1)). By analyzing the Huang-Rhys parameters as a function of temperature, deduced from the phonon replica intensities, we have found that the excitons are strongly localized in the lower energy tails. The lifetimes of the I(1 )and I(2 )transitions were measured to be < 100 ps due to enhanced surface recombination. PACS: 78.47.+p, 78.55.-m, 78.55.Cr, 78.66.-w, 78.66.Fd
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spelling pubmed-32122302011-11-09 GaN nanorods grown on Si (111) substrates and exciton localization Park, Young S Holmes, Mark J Shon, Y Yoon, Im Taek Im, Hyunsik Taylor, Robert A Nanoscale Res Lett Nano Express We have investigated exciton localization in binary GaN nanorods using micro- and time-resolved photoluminescence measurements. The temperature dependence of the photoluminescence has been measured, and several phonon replicas have been observed at the lower energy side of the exciton bound to basal stacking faults (I(1)). By analyzing the Huang-Rhys parameters as a function of temperature, deduced from the phonon replica intensities, we have found that the excitons are strongly localized in the lower energy tails. The lifetimes of the I(1 )and I(2 )transitions were measured to be < 100 ps due to enhanced surface recombination. PACS: 78.47.+p, 78.55.-m, 78.55.Cr, 78.66.-w, 78.66.Fd Springer 2011-01-12 /pmc/articles/PMC3212230/ /pubmed/21711583 http://dx.doi.org/10.1186/1556-276X-6-81 Text en Copyright ©2011 Park et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Park, Young S
Holmes, Mark J
Shon, Y
Yoon, Im Taek
Im, Hyunsik
Taylor, Robert A
GaN nanorods grown on Si (111) substrates and exciton localization
title GaN nanorods grown on Si (111) substrates and exciton localization
title_full GaN nanorods grown on Si (111) substrates and exciton localization
title_fullStr GaN nanorods grown on Si (111) substrates and exciton localization
title_full_unstemmed GaN nanorods grown on Si (111) substrates and exciton localization
title_short GaN nanorods grown on Si (111) substrates and exciton localization
title_sort gan nanorods grown on si (111) substrates and exciton localization
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212230/
https://www.ncbi.nlm.nih.gov/pubmed/21711583
http://dx.doi.org/10.1186/1556-276X-6-81
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