Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy

The surface morphology of Ge(0.96)Sn(0.04)/Si(100) heterostructures grown at temperatures from 250 to 450°C by atomic force microscopy (AFM) and scanning tunnel microscopy (STM) ex situ has been studied. The statistical data for the density of Ge(0.96)Sn(0.04 )nanodots (ND) depending on their latera...

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Detalles Bibliográficos
Autores principales: Mashanov, Vladimir, Ulyanov, Vladimir, Timofeev, Vyacheslav, Nikiforov, Aleksandr, Pchelyakov, Oleg, Yu, Ing-Song, Cheng, Henry
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212234/
https://www.ncbi.nlm.nih.gov/pubmed/21711584
http://dx.doi.org/10.1186/1556-276X-6-85

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212234/
https://www.ncbi.nlm.nih.gov/pubmed/21711584
http://dx.doi.org/10.1186/1556-276X-6-85

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