High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy

We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26%...

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Detalles Bibliográficos
Autores principales: Lu, Shulong, Ji, Lian, He, Wei, Dai, Pan, Yang, Hui, Arimochi, Masayuki, Yoshida, Hiroshi, Uchida, Shiro, Ikeda, Masao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3223256/
https://www.ncbi.nlm.nih.gov/pubmed/22040124
http://dx.doi.org/10.1186/1556-276X-6-576

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3223256/
https://www.ncbi.nlm.nih.gov/pubmed/22040124
http://dx.doi.org/10.1186/1556-276X-6-576

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