High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy

We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26%...

Descripción completa

Detalles Bibliográficos
Autores principales: Lu, Shulong, Ji, Lian, He, Wei, Dai, Pan, Yang, Hui, Arimochi, Masayuki, Yoshida, Hiroshi, Uchida, Shiro, Ikeda, Masao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3223256/
https://www.ncbi.nlm.nih.gov/pubmed/22040124
http://dx.doi.org/10.1186/1556-276X-6-576
Descripción
Sumario:We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26% at one sun concentration and air mass 1.5 global (AM1.5G) is realized. The efficiency of 16.4% is also reached for GaInP solar cell. Our results demonstrate that the MBE-grown phosphide-contained III-V compound semiconductor solar cell can be quite comparable to the metal-organic-chemical-vapor-deposition-grown high-efficiency solar cell.

Ejemplares similares