High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy

We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26%...

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Detalles Bibliográficos
Autores principales: Lu, Shulong, Ji, Lian, He, Wei, Dai, Pan, Yang, Hui, Arimochi, Masayuki, Yoshida, Hiroshi, Uchida, Shiro, Ikeda, Masao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3223256/
https://www.ncbi.nlm.nih.gov/pubmed/22040124
http://dx.doi.org/10.1186/1556-276X-6-576
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author Lu, Shulong
Ji, Lian
He, Wei
Dai, Pan
Yang, Hui
Arimochi, Masayuki
Yoshida, Hiroshi
Uchida, Shiro
Ikeda, Masao
author_facet Lu, Shulong
Ji, Lian
He, Wei
Dai, Pan
Yang, Hui
Arimochi, Masayuki
Yoshida, Hiroshi
Uchida, Shiro
Ikeda, Masao
author_sort Lu, Shulong
collection PubMed
description We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26% at one sun concentration and air mass 1.5 global (AM1.5G) is realized. The efficiency of 16.4% is also reached for GaInP solar cell. Our results demonstrate that the MBE-grown phosphide-contained III-V compound semiconductor solar cell can be quite comparable to the metal-organic-chemical-vapor-deposition-grown high-efficiency solar cell.
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spelling pubmed-32232562011-11-25 High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy Lu, Shulong Ji, Lian He, Wei Dai, Pan Yang, Hui Arimochi, Masayuki Yoshida, Hiroshi Uchida, Shiro Ikeda, Masao Nanoscale Res Lett Nano Express We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26% at one sun concentration and air mass 1.5 global (AM1.5G) is realized. The efficiency of 16.4% is also reached for GaInP solar cell. Our results demonstrate that the MBE-grown phosphide-contained III-V compound semiconductor solar cell can be quite comparable to the metal-organic-chemical-vapor-deposition-grown high-efficiency solar cell. Springer 2011-10-31 /pmc/articles/PMC3223256/ /pubmed/22040124 http://dx.doi.org/10.1186/1556-276X-6-576 Text en Copyright ©2011 Lu et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Lu, Shulong
Ji, Lian
He, Wei
Dai, Pan
Yang, Hui
Arimochi, Masayuki
Yoshida, Hiroshi
Uchida, Shiro
Ikeda, Masao
High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy
title High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy
title_full High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy
title_fullStr High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy
title_full_unstemmed High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy
title_short High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy
title_sort high-efficiency gaas and gainp solar cells grown by all solid-state molecular-beam-epitaxy
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3223256/
https://www.ncbi.nlm.nih.gov/pubmed/22040124
http://dx.doi.org/10.1186/1556-276X-6-576
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