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An Analytical Model of Joule Heating in Piezoresistive Microcantilevers

The present study investigates Joule heating in piezoresistive microcantilever sensors. Joule heating and thermal deflections are a major source of noise in such sensors. This work uses analytical and numerical techniques to characterise the Joule heating in 4-layer piezoresistive microcantilevers m...

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Detalles Bibliográficos
Autores principales: Ansari, Mohd Zahid, Cho, Chongdu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2010
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3231039/
https://www.ncbi.nlm.nih.gov/pubmed/22163433
http://dx.doi.org/10.3390/s101109668
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author Ansari, Mohd Zahid
Cho, Chongdu
author_facet Ansari, Mohd Zahid
Cho, Chongdu
author_sort Ansari, Mohd Zahid
collection PubMed
description The present study investigates Joule heating in piezoresistive microcantilever sensors. Joule heating and thermal deflections are a major source of noise in such sensors. This work uses analytical and numerical techniques to characterise the Joule heating in 4-layer piezoresistive microcantilevers made of silicon and silicon dioxide substrates but with the same U-shaped silicon piezoresistor. A theoretical model for predicting the temperature generated due to Joule heating is developed. The commercial finite element software ANSYS Multiphysics was used to study the effect of electrical potential on temperature and deflection produced in the cantilevers. The effect of piezoresistor width on Joule heating is also studied. Results show that Joule heating strongly depends on the applied potential and width of piezoresistor and that a silicon substrate cantilever has better thermal characteristics than a silicon dioxide cantilever.
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spelling pubmed-32310392011-12-07 An Analytical Model of Joule Heating in Piezoresistive Microcantilevers Ansari, Mohd Zahid Cho, Chongdu Sensors (Basel) Article The present study investigates Joule heating in piezoresistive microcantilever sensors. Joule heating and thermal deflections are a major source of noise in such sensors. This work uses analytical and numerical techniques to characterise the Joule heating in 4-layer piezoresistive microcantilevers made of silicon and silicon dioxide substrates but with the same U-shaped silicon piezoresistor. A theoretical model for predicting the temperature generated due to Joule heating is developed. The commercial finite element software ANSYS Multiphysics was used to study the effect of electrical potential on temperature and deflection produced in the cantilevers. The effect of piezoresistor width on Joule heating is also studied. Results show that Joule heating strongly depends on the applied potential and width of piezoresistor and that a silicon substrate cantilever has better thermal characteristics than a silicon dioxide cantilever. Molecular Diversity Preservation International (MDPI) 2010-11-01 /pmc/articles/PMC3231039/ /pubmed/22163433 http://dx.doi.org/10.3390/s101109668 Text en © 2010 by the authors; licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/. (http://creativecommons.org/licenses/by/3.0/) )
spellingShingle Article
Ansari, Mohd Zahid
Cho, Chongdu
An Analytical Model of Joule Heating in Piezoresistive Microcantilevers
title An Analytical Model of Joule Heating in Piezoresistive Microcantilevers
title_full An Analytical Model of Joule Heating in Piezoresistive Microcantilevers
title_fullStr An Analytical Model of Joule Heating in Piezoresistive Microcantilevers
title_full_unstemmed An Analytical Model of Joule Heating in Piezoresistive Microcantilevers
title_short An Analytical Model of Joule Heating in Piezoresistive Microcantilevers
title_sort analytical model of joule heating in piezoresistive microcantilevers
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3231039/
https://www.ncbi.nlm.nih.gov/pubmed/22163433
http://dx.doi.org/10.3390/s101109668
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