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An Improved Equivalent Simulation Model for CMOS Integrated Hall Plates

An improved equivalent simulation model for a CMOS-integrated Hall plate is described in this paper. Compared with existing models, this model covers voltage dependent non-linear effects, geometrical effects, temperature effects and packaging stress influences, and only includes a small number of ph...

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Detalles Bibliográficos
Autores principales: Xu, Yue, Pan, Hong-Bin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2011
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3231436/
https://www.ncbi.nlm.nih.gov/pubmed/22163955
http://dx.doi.org/10.3390/s110606284