Cargando…
An Improved Equivalent Simulation Model for CMOS Integrated Hall Plates
An improved equivalent simulation model for a CMOS-integrated Hall plate is described in this paper. Compared with existing models, this model covers voltage dependent non-linear effects, geometrical effects, temperature effects and packaging stress influences, and only includes a small number of ph...
| Autores principales: | , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Molecular Diversity Preservation International (MDPI)
2011
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3231436/ https://www.ncbi.nlm.nih.gov/pubmed/22163955 http://dx.doi.org/10.3390/s110606284 |