Open-Gated pH Sensor Fabricated on an Undoped-AlGaN/GaN HEMT Structure

The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated. Under air-exposed ambient conditions, the open-gated undoped AlGaN/GaN HEMT only shows the presence of a linear current region. This se...

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Detalles Bibliográficos
Autores principales: Abidin, Mastura Shafinaz Zainal, Hashim, Abdul Manaf, Sharifabad, Maneea Eizadi, Rahman, Shaharin Fadzli Abd, Sadoh, Taizoh
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2011
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3231593/
https://www.ncbi.nlm.nih.gov/pubmed/22163786
http://dx.doi.org/10.3390/s110303067

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3231593/
https://www.ncbi.nlm.nih.gov/pubmed/22163786
http://dx.doi.org/10.3390/s110303067

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