Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications

A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I–V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barri...

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Detalles Bibliográficos
Autores principales: Hashim, Abdul Manaf, Mustafa, Farahiyah, Rahman, Shaharin Fadzli Abd, Rahman, Abdul Rahim Abdul
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2011
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3231723/
https://www.ncbi.nlm.nih.gov/pubmed/22164066
http://dx.doi.org/10.3390/s110808127

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3231723/
https://www.ncbi.nlm.nih.gov/pubmed/22164066
http://dx.doi.org/10.3390/s110808127

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