Cargando…
Deep Level Transient Spectroscopy in Quantum Dot Characterization
Deep level transient spectroscopy (DLTS) for investigating electronic properties of self-assembled InAs/GaAs quantum dots (QDs) is described in an approach, where experimental and theoretical DLTS data are compared in a temperature-voltage representation. From such comparative studies, the main mech...
Autores principales: | Engström, O, Kaniewska, M |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2008
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3244859/ http://dx.doi.org/10.1007/s11671-008-9133-5 |
Ejemplares similares
-
Single-dot Spectroscopy of GaAs Quantum Dots Fabricated by Filling of Self-assembled Nanoholes
por: Heyn, Ch, et al.
Publicado: (2010) -
Effects of crossed states on photoluminescence excitation spectroscopy of InAs quantum dots
por: Shih, Ching-I, et al.
Publicado: (2011) -
Guided self-assembly of lateral InAs/GaAs quantum-dot molecules for single molecule spectroscopy
por: Wang, L, et al.
Publicado: (2006) -
Quantum dot cascade laser
por: Zhuo, Ning, et al.
Publicado: (2014) -
Nitrogen-Doped Carbon Dots for “green” Quantum Dot Solar Cells
por: Wang, Hao, et al.
Publicado: (2016)