Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition

Si/Si(0.66)Ge(0.34)coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), cross-section...

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Detalles Bibliográficos
Autores principales: Wang, Rui, Yoon, Soon Fatt, Lu, Fen, Fan, Wei Jun, Liu, Chong Yang, Loh, Ter-Hoe, Nguyen, Hoai Son, Narayanan, Balasubramanian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2007
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3245654/
http://dx.doi.org/10.1007/s11671-007-9046-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3245654/
http://dx.doi.org/10.1007/s11671-007-9046-8

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