Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition

Si/Si(0.66)Ge(0.34)coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), cross-section...

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Detalles Bibliográficos
Autores principales: Wang, Rui, Yoon, Soon Fatt, Lu, Fen, Fan, Wei Jun, Liu, Chong Yang, Loh, Ter-Hoe, Nguyen, Hoai Son, Narayanan, Balasubramanian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2007
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3245654/
http://dx.doi.org/10.1007/s11671-007-9046-8
Descripción
Sumario:Si/Si(0.66)Ge(0.34)coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), cross-sectional transmission electron microscopy (XTEM) and photoluminescence (PL) spectroscopy. Blue shift in PL peak energy due to interwell coupling was observed in the CQWs following increase in the Si barrier thickness. The Si/SiGe heterostructure growth process and theoretical band structure model was validated by comparing the energy of the no-phonon peak calculated by the 6 + 2-bandk·pmethod with experimental PL data. Close agreement between theoretical calculations and experimental data was obtained.

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