Strain Relief Analysis of InN Quantum Dots Grown on GaN

We present a study by transmission electron microscopy (TEM) of the strain state of individual InN quantum dots (QDs) grown on GaN substrates. Moiré fringe and high resolution TEM analyses showed that the QDs are almost fully relaxed due to the generation of a 60° misfit dislocation network at the I...

Descripción completa

Detalles Bibliográficos
Autores principales: Lozano, Juan G, Sánchez, Ana M, García, Rafael, Ruffenach, Sandra, Briot, Olivier, González, David
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2007
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3246598/
https://www.ncbi.nlm.nih.gov/pubmed/21794190
http://dx.doi.org/10.1007/s11671-007-9080-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3246598/
https://www.ncbi.nlm.nih.gov/pubmed/21794190
http://dx.doi.org/10.1007/s11671-007-9080-6

Ejemplares similares