Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing

We demonstrate multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing. Proton implantation, followed by annealing is used to create differential interdiffusion in the active region of the devices. The characteristics (lasing-spectra, threshold currents and slope eff...

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Detalles Bibliográficos
Autores principales: Mokkapati, S, Du, Sichao, Buda, M, Fu, L, Tan, HH, Jagadish, C
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2007
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3246610/
http://dx.doi.org/10.1007/s11671-007-9097-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3246610/
http://dx.doi.org/10.1007/s11671-007-9097-x

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