Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing

We demonstrate multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing. Proton implantation, followed by annealing is used to create differential interdiffusion in the active region of the devices. The characteristics (lasing-spectra, threshold currents and slope eff...

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Detalles Bibliográficos
Autores principales: Mokkapati, S, Du, Sichao, Buda, M, Fu, L, Tan, HH, Jagadish, C
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2007
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3246610/
http://dx.doi.org/10.1007/s11671-007-9097-x
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author Mokkapati, S
Du, Sichao
Buda, M
Fu, L
Tan, HH
Jagadish, C
author_facet Mokkapati, S
Du, Sichao
Buda, M
Fu, L
Tan, HH
Jagadish, C
author_sort Mokkapati, S
collection PubMed
description We demonstrate multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing. Proton implantation, followed by annealing is used to create differential interdiffusion in the active region of the devices. The characteristics (lasing-spectra, threshold currents and slope efficiencies) of the multi-wavelength devices are compared to those of as-grown devices and the differences are explained in terms of altered energy level spacing in the annealed quantum dots.
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spelling pubmed-32466102011-12-28 Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing Mokkapati, S Du, Sichao Buda, M Fu, L Tan, HH Jagadish, C Nanoscale Res Lett Nano Express We demonstrate multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing. Proton implantation, followed by annealing is used to create differential interdiffusion in the active region of the devices. The characteristics (lasing-spectra, threshold currents and slope efficiencies) of the multi-wavelength devices are compared to those of as-grown devices and the differences are explained in terms of altered energy level spacing in the annealed quantum dots. Springer 2007-09-25 /pmc/articles/PMC3246610/ http://dx.doi.org/10.1007/s11671-007-9097-x Text en Copyright ©2007 to the authors
spellingShingle Nano Express
Mokkapati, S
Du, Sichao
Buda, M
Fu, L
Tan, HH
Jagadish, C
Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing
title Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing
title_full Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing
title_fullStr Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing
title_full_unstemmed Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing
title_short Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing
title_sort multiple wavelength ingaas quantum dot lasers using ion implantation induced intermixing
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3246610/
http://dx.doi.org/10.1007/s11671-007-9097-x
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