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Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing
We demonstrate multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing. Proton implantation, followed by annealing is used to create differential interdiffusion in the active region of the devices. The characteristics (lasing-spectra, threshold currents and slope eff...
Autores principales: | Mokkapati, S, Du, Sichao, Buda, M, Fu, L, Tan, HH, Jagadish, C |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2007
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3246610/ http://dx.doi.org/10.1007/s11671-007-9097-x |
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