Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation

Self-assembled GaInNAs quantum dots (QDs) were grown on GaAs (001) substrate using solid-source molecular-beam epitaxy (SSMBE) equipped with a radio-frequency nitrogen plasma source. The GaInNAs QD growth characteristics were extensively investigated using atomic-force microscopy (AFM), photolumines...

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Detalles Bibliográficos
Autores principales: Yoon, SF, Liu, CY, Sun, ZZ, Yew, KC
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2006
Materias:
Nano Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3246630/
http://dx.doi.org/10.1007/s11671-006-9009-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3246630/
http://dx.doi.org/10.1007/s11671-006-9009-5

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