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Buffer layer-assisted growth of Ge nanoclusters on Si
In the buffer layer-assisted growth method, a condensed inert gas layer of xenon, with low-surface free energy, is used as a buffer to prevent direct interactions of deposited atoms with substrates. Because of␣an unusually wide applicability, the buffer layer-assisted growth method has provided a un...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2006
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3246633/ http://dx.doi.org/10.1007/s11671-006-9011-y |