Structure and electrical properties of sputtered TiO(2)/ZrO(2 )bilayer composite dielectrics upon annealing in nitrogen

The high-k dielectric TiO(2)/ZrO(2 )bilayer composite film was prepared on a Si substrate by radio frequency magnetron sputtering and post annealing in N(2 )at various temperatures in the range of 573 K to 973 K. Transmission electron microscopy observation revealed that the bilayer film fully mixed together and had good interfacial property at 773 K. Metal-oxide-semiconductor capacitors with high-k gate dielectric TiO(2)/ZrO(2)/p-Si were fabricated using Pt as the top gate electrode and as the bottom side electrode. The largest property permittivity of 46.1 and a very low leakage current density of 3.35 × 10(-5 )A/cm(2 )were achieved for the sample of TiO(2)/ZrO(2)/Si after annealing at 773 K.