Cathodoluminescence spectra of gallium nitride nanorods

Gallium nitride [GaN] nanorods grown on a Si(111) substrate at 720°C via plasma-assisted molecular beam epitaxy were studied by field-emission electron microscopy and cathodoluminescence [CL]. The surface topography and optical properties of the GaN nanorod cluster and single GaN nanorod were measur...

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Detalles Bibliográficos
Autores principales: Tsai, Chia-Chang, Li, Guan-Hua, Lin, Yuan-Ting, Chang, Ching-Wen, Wadekar, Paritosh, Chen, Quark Yung-Sung, Rigutti, Lorenzo, Tchernycheva, Maria, Julien, François Henri, Tu, Li-Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3270069/
https://www.ncbi.nlm.nih.gov/pubmed/22168896
http://dx.doi.org/10.1186/1556-276X-6-631

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3270069/
https://www.ncbi.nlm.nih.gov/pubmed/22168896
http://dx.doi.org/10.1186/1556-276X-6-631

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