Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications

Sensor technology is moving towards wide-band-gap semiconductors providing high temperature capable devices. Indeed, the higher thermal conductivity of silicon carbide, (three times more than silicon), permits better heat dissipation and allows better cooling and temperature management. Though many...

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Detalles Bibliográficos
Autores principales: Salah, Tarek Ben, Khachroumi, Sofiane, Morel, Hervé
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2010
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3270848/
https://www.ncbi.nlm.nih.gov/pubmed/22315547
http://dx.doi.org/10.3390/s100100388

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3270848/
https://www.ncbi.nlm.nih.gov/pubmed/22315547
http://dx.doi.org/10.3390/s100100388

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