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Synthesis of highly transparent ultrananocrystalline diamond films from a low-pressure, low-temperature focused microwave plasma jet

This paper describes a new low-temperature process underlying the synthesis of highly transparent ultrananocrystalline diamond [UNCD] films by low-pressure and unheated microwave plasma jet-enhanced chemical vapor deposition with Ar-1%CH(4)-10%H(2 )gas chemistry. The unique low-pressure/low-temperat...

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Detalles Bibliográficos
Autores principales: Liao, Wen-Hsiang, Wei, Da-Hua, Lin, Chii-Ruey
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3271979/
https://www.ncbi.nlm.nih.gov/pubmed/22260391
http://dx.doi.org/10.1186/1556-276X-7-82
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author Liao, Wen-Hsiang
Wei, Da-Hua
Lin, Chii-Ruey
author_facet Liao, Wen-Hsiang
Wei, Da-Hua
Lin, Chii-Ruey
author_sort Liao, Wen-Hsiang
collection PubMed
description This paper describes a new low-temperature process underlying the synthesis of highly transparent ultrananocrystalline diamond [UNCD] films by low-pressure and unheated microwave plasma jet-enhanced chemical vapor deposition with Ar-1%CH(4)-10%H(2 )gas chemistry. The unique low-pressure/low-temperature [LPLT] plasma jet-enhanced growth even with added H(2 )and unheated substrates yields UNCD films similar to those prepared by plasma-enhanced growth without addition of H(2 )and heating procedure. This is due to the focused plasma jet which effectively compensated for the sluggish kinetics associated with LPLT growth. The effects of pressure on UNCD film synthesis from the microwave plasma jet were systematically investigated. The results indicated that the substrate temperature, grain size, surface roughness, and sp(3 )carbon content in the films decreased with decreasing pressure. The reason is due to the great reduction of H(α )emission to lower the etching of sp(2 )carbon phase, resulting from the increase of mean free path with decreasing pressure. We have demonstrated that the transition from nanocrystalline (80 nm) to ultrananocrystalline (3 to 5 nm) diamond films grown via microwave Ar-1%CH(4)-10%H(2 )plasma jets could be controlled by changing the pressure from 100 to 30 Torr. The 250-nm-thick UNCD film was synthesized on glass substrates (glass transition temperature [T(g)] 557°C) using the unique LPLT (30 Torr/460°C) microwave plasma jet, which produced UNCD films with a high sp(3 )carbon content (95.65%) and offered high optical transmittance (approximately 86% at 700 nm).
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spelling pubmed-32719792012-02-06 Synthesis of highly transparent ultrananocrystalline diamond films from a low-pressure, low-temperature focused microwave plasma jet Liao, Wen-Hsiang Wei, Da-Hua Lin, Chii-Ruey Nanoscale Res Lett Nano Express This paper describes a new low-temperature process underlying the synthesis of highly transparent ultrananocrystalline diamond [UNCD] films by low-pressure and unheated microwave plasma jet-enhanced chemical vapor deposition with Ar-1%CH(4)-10%H(2 )gas chemistry. The unique low-pressure/low-temperature [LPLT] plasma jet-enhanced growth even with added H(2 )and unheated substrates yields UNCD films similar to those prepared by plasma-enhanced growth without addition of H(2 )and heating procedure. This is due to the focused plasma jet which effectively compensated for the sluggish kinetics associated with LPLT growth. The effects of pressure on UNCD film synthesis from the microwave plasma jet were systematically investigated. The results indicated that the substrate temperature, grain size, surface roughness, and sp(3 )carbon content in the films decreased with decreasing pressure. The reason is due to the great reduction of H(α )emission to lower the etching of sp(2 )carbon phase, resulting from the increase of mean free path with decreasing pressure. We have demonstrated that the transition from nanocrystalline (80 nm) to ultrananocrystalline (3 to 5 nm) diamond films grown via microwave Ar-1%CH(4)-10%H(2 )plasma jets could be controlled by changing the pressure from 100 to 30 Torr. The 250-nm-thick UNCD film was synthesized on glass substrates (glass transition temperature [T(g)] 557°C) using the unique LPLT (30 Torr/460°C) microwave plasma jet, which produced UNCD films with a high sp(3 )carbon content (95.65%) and offered high optical transmittance (approximately 86% at 700 nm). Springer 2012-01-19 /pmc/articles/PMC3271979/ /pubmed/22260391 http://dx.doi.org/10.1186/1556-276X-7-82 Text en Copyright ©2012 Liao et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Liao, Wen-Hsiang
Wei, Da-Hua
Lin, Chii-Ruey
Synthesis of highly transparent ultrananocrystalline diamond films from a low-pressure, low-temperature focused microwave plasma jet
title Synthesis of highly transparent ultrananocrystalline diamond films from a low-pressure, low-temperature focused microwave plasma jet
title_full Synthesis of highly transparent ultrananocrystalline diamond films from a low-pressure, low-temperature focused microwave plasma jet
title_fullStr Synthesis of highly transparent ultrananocrystalline diamond films from a low-pressure, low-temperature focused microwave plasma jet
title_full_unstemmed Synthesis of highly transparent ultrananocrystalline diamond films from a low-pressure, low-temperature focused microwave plasma jet
title_short Synthesis of highly transparent ultrananocrystalline diamond films from a low-pressure, low-temperature focused microwave plasma jet
title_sort synthesis of highly transparent ultrananocrystalline diamond films from a low-pressure, low-temperature focused microwave plasma jet
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3271979/
https://www.ncbi.nlm.nih.gov/pubmed/22260391
http://dx.doi.org/10.1186/1556-276X-7-82
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