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Carbon Nanotube Integration with a CMOS Process

This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully invest...

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Autores principales: Perez, Maximiliano S., Lerner, Betiana, Resasco, Daniel E., Pareja Obregon, Pablo D., Julian, Pedro M., Mandolesi, Pablo S., Buffa, Fabian A., Boselli, Alfredo, Lamagna, Alberto
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2010
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3274251/
https://www.ncbi.nlm.nih.gov/pubmed/22319330
http://dx.doi.org/10.3390/s100403857
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author Perez, Maximiliano S.
Lerner, Betiana
Resasco, Daniel E.
Pareja Obregon, Pablo D.
Julian, Pedro M.
Mandolesi, Pablo S.
Buffa, Fabian A.
Boselli, Alfredo
Lamagna, Alberto
author_facet Perez, Maximiliano S.
Lerner, Betiana
Resasco, Daniel E.
Pareja Obregon, Pablo D.
Julian, Pedro M.
Mandolesi, Pablo S.
Buffa, Fabian A.
Boselli, Alfredo
Lamagna, Alberto
author_sort Perez, Maximiliano S.
collection PubMed
description This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new route in the design of more efficient, low cost sensors with high reproducibility in their manufacture.
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spelling pubmed-32742512012-02-08 Carbon Nanotube Integration with a CMOS Process Perez, Maximiliano S. Lerner, Betiana Resasco, Daniel E. Pareja Obregon, Pablo D. Julian, Pedro M. Mandolesi, Pablo S. Buffa, Fabian A. Boselli, Alfredo Lamagna, Alberto Sensors (Basel) Article This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new route in the design of more efficient, low cost sensors with high reproducibility in their manufacture. Molecular Diversity Preservation International (MDPI) 2010-04-15 /pmc/articles/PMC3274251/ /pubmed/22319330 http://dx.doi.org/10.3390/s100403857 Text en © 2010 by the authors; licensee Molecular Diversity Preservation International, Basel, Switzerland. This article is an open-access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/).
spellingShingle Article
Perez, Maximiliano S.
Lerner, Betiana
Resasco, Daniel E.
Pareja Obregon, Pablo D.
Julian, Pedro M.
Mandolesi, Pablo S.
Buffa, Fabian A.
Boselli, Alfredo
Lamagna, Alberto
Carbon Nanotube Integration with a CMOS Process
title Carbon Nanotube Integration with a CMOS Process
title_full Carbon Nanotube Integration with a CMOS Process
title_fullStr Carbon Nanotube Integration with a CMOS Process
title_full_unstemmed Carbon Nanotube Integration with a CMOS Process
title_short Carbon Nanotube Integration with a CMOS Process
title_sort carbon nanotube integration with a cmos process
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3274251/
https://www.ncbi.nlm.nih.gov/pubmed/22319330
http://dx.doi.org/10.3390/s100403857
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