SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system

In this paper, we describe a method of amorphous silicon carbide film formation for a solar cell passivation layer. The film was deposited on p-type silicon (100) and glass substrates by an RF magnetron co-sputtering system using a Si target and a C target at a room-temperature condition. Several di...

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Detalles Bibliográficos
Autores principales: Joung, Yeun-Ho, Kang, Hyun Il, Kim, Jung Hyun, Lee, Hae-Seok, Lee, Jaehyung, Choi, Won Seok
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3276418/
https://www.ncbi.nlm.nih.gov/pubmed/22221730
http://dx.doi.org/10.1186/1556-276X-7-22

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3276418/
https://www.ncbi.nlm.nih.gov/pubmed/22221730
http://dx.doi.org/10.1186/1556-276X-7-22

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