Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors

We report our recent work on the growth and fabrication of InAs/GaSb type II superlattice photodiode detectors. The superlattice consists of 9 monolayer InAs/12 monolayer GaSb in each period. Lattice mismatch between the GaSb substrate and the superlattice is 1.5 × 10(-4). The full width at half max...

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Detalles Bibliográficos
Autores principales: Chen, Jianxin, Xu, Qingqing, Zhou, Yi, Jin, Jupeng, Lin, Chun, He, Li
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3276608/
https://www.ncbi.nlm.nih.gov/pubmed/22192726
http://dx.doi.org/10.1186/1556-276X-6-635

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3276608/
https://www.ncbi.nlm.nih.gov/pubmed/22192726
http://dx.doi.org/10.1186/1556-276X-6-635

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