Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors

We report our recent work on the growth and fabrication of InAs/GaSb type II superlattice photodiode detectors. The superlattice consists of 9 monolayer InAs/12 monolayer GaSb in each period. Lattice mismatch between the GaSb substrate and the superlattice is 1.5 × 10(-4). The full width at half max...

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Detalles Bibliográficos
Autores principales: Chen, Jianxin, Xu, Qingqing, Zhou, Yi, Jin, Jupeng, Lin, Chun, He, Li
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3276608/
https://www.ncbi.nlm.nih.gov/pubmed/22192726
http://dx.doi.org/10.1186/1556-276X-6-635
Descripción
Sumario:We report our recent work on the growth and fabrication of InAs/GaSb type II superlattice photodiode detectors. The superlattice consists of 9 monolayer InAs/12 monolayer GaSb in each period. Lattice mismatch between the GaSb substrate and the superlattice is 1.5 × 10(-4). The full width at half maximum of the first-order satellite peak from X-ray diffraction is 28 arc sec. The P-I-N photodiodes in which the absorption regions (I regions) have 600 periods of superlattice show a 50% cutoff wavelength of 4.3 μm. The current responsivity was measured at 0.48 A/W from blackbody radiation. The peak detectivity of 1.75 × 10(11 )cmHz(1/2)/W and the quantum efficiency of 41% at 3.6 μm were obtained. PACS: 85.60.-q; 85.60.Gz; 85.35.-Be.

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