Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors

We report our recent work on the growth and fabrication of InAs/GaSb type II superlattice photodiode detectors. The superlattice consists of 9 monolayer InAs/12 monolayer GaSb in each period. Lattice mismatch between the GaSb substrate and the superlattice is 1.5 × 10(-4). The full width at half max...

Descripción completa

Detalles Bibliográficos
Autores principales: Chen, Jianxin, Xu, Qingqing, Zhou, Yi, Jin, Jupeng, Lin, Chun, He, Li
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3276608/
https://www.ncbi.nlm.nih.gov/pubmed/22192726
http://dx.doi.org/10.1186/1556-276X-6-635
_version_ 1782223392426950656
author Chen, Jianxin
Xu, Qingqing
Zhou, Yi
Jin, Jupeng
Lin, Chun
He, Li
author_facet Chen, Jianxin
Xu, Qingqing
Zhou, Yi
Jin, Jupeng
Lin, Chun
He, Li
author_sort Chen, Jianxin
collection PubMed
description We report our recent work on the growth and fabrication of InAs/GaSb type II superlattice photodiode detectors. The superlattice consists of 9 monolayer InAs/12 monolayer GaSb in each period. Lattice mismatch between the GaSb substrate and the superlattice is 1.5 × 10(-4). The full width at half maximum of the first-order satellite peak from X-ray diffraction is 28 arc sec. The P-I-N photodiodes in which the absorption regions (I regions) have 600 periods of superlattice show a 50% cutoff wavelength of 4.3 μm. The current responsivity was measured at 0.48 A/W from blackbody radiation. The peak detectivity of 1.75 × 10(11 )cmHz(1/2)/W and the quantum efficiency of 41% at 3.6 μm were obtained. PACS: 85.60.-q; 85.60.Gz; 85.35.-Be.
format Online
Article
Text
id pubmed-3276608
institution National Center for Biotechnology Information
language English
publishDate 2011
publisher Springer
record_format MEDLINE/PubMed
spelling pubmed-32766082012-02-10 Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors Chen, Jianxin Xu, Qingqing Zhou, Yi Jin, Jupeng Lin, Chun He, Li Nanoscale Res Lett Nano Express We report our recent work on the growth and fabrication of InAs/GaSb type II superlattice photodiode detectors. The superlattice consists of 9 monolayer InAs/12 monolayer GaSb in each period. Lattice mismatch between the GaSb substrate and the superlattice is 1.5 × 10(-4). The full width at half maximum of the first-order satellite peak from X-ray diffraction is 28 arc sec. The P-I-N photodiodes in which the absorption regions (I regions) have 600 periods of superlattice show a 50% cutoff wavelength of 4.3 μm. The current responsivity was measured at 0.48 A/W from blackbody radiation. The peak detectivity of 1.75 × 10(11 )cmHz(1/2)/W and the quantum efficiency of 41% at 3.6 μm were obtained. PACS: 85.60.-q; 85.60.Gz; 85.35.-Be. Springer 2011-12-22 /pmc/articles/PMC3276608/ /pubmed/22192726 http://dx.doi.org/10.1186/1556-276X-6-635 Text en Copyright ©2011 Chen et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Chen, Jianxin
Xu, Qingqing
Zhou, Yi
Jin, Jupeng
Lin, Chun
He, Li
Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors
title Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors
title_full Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors
title_fullStr Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors
title_full_unstemmed Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors
title_short Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors
title_sort growth and fabrication of inas/gasb type ii superlattice mid-wavelength infrared photodetectors
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3276608/
https://www.ncbi.nlm.nih.gov/pubmed/22192726
http://dx.doi.org/10.1186/1556-276X-6-635
work_keys_str_mv AT chenjianxin growthandfabricationofinasgasbtypeiisuperlatticemidwavelengthinfraredphotodetectors
AT xuqingqing growthandfabricationofinasgasbtypeiisuperlatticemidwavelengthinfraredphotodetectors
AT zhouyi growthandfabricationofinasgasbtypeiisuperlatticemidwavelengthinfraredphotodetectors
AT jinjupeng growthandfabricationofinasgasbtypeiisuperlatticemidwavelengthinfraredphotodetectors
AT linchun growthandfabricationofinasgasbtypeiisuperlatticemidwavelengthinfraredphotodetectors
AT heli growthandfabricationofinasgasbtypeiisuperlatticemidwavelengthinfraredphotodetectors

Ejemplares similares