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Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors

We report our recent work on the growth and fabrication of InAs/GaSb type II superlattice photodiode detectors. The superlattice consists of 9 monolayer InAs/12 monolayer GaSb in each period. Lattice mismatch between the GaSb substrate and the superlattice is 1.5 × 10(-4). The full width at half max...

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Detalles Bibliográficos
Autores principales:	Chen, Jianxin, Xu, Qingqing, Zhou, Yi, Jin, Jupeng, Lin, Chun, He, Li
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer 2011
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3276608/ https://www.ncbi.nlm.nih.gov/pubmed/22192726 http://dx.doi.org/10.1186/1556-276X-6-635

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