A Novel pH-dependent Drift Improvement Method for Zirconium Dioxide Gated pH-Ion Sensitive Field Effect Transistors

A novel compensation method for Zirconium dioxide gated Ion Sensitive Field Effect Transistors (ISFETs) to improve pH-dependent drift was demonstrated. Through the sequential measurements for both the n-channel and p-channel ISFETs, 75–100% pH-dependent drift could be successfully suppressed for the...

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Detalles Bibliográficos
Autores principales: Chang, Kow-Ming, Chang, Chih-Tien, Chao, Kuo-Yi, Lin, Chia-Hung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2010
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3292137/
https://www.ncbi.nlm.nih.gov/pubmed/22399897
http://dx.doi.org/10.3390/s100504643

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3292137/
https://www.ncbi.nlm.nih.gov/pubmed/22399897
http://dx.doi.org/10.3390/s100504643

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