Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO(2)/Al(2)O(3 )gate stack: study of Ge auto-doping and p-type Zn doping

Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO(2)/Al(2)O(3)) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organ...

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Detalles Bibliográficos
Autores principales: Dalapati, Goutam Kumar, Shun Wong, Terence Kin, Li, Yang, Chia, Ching Kean, Das, Anindita, Mahata, Chandreswar, Gao, Han, Chattopadhyay, Sanatan, Kumar, Manippady Krishna, Seng, Hwee Leng, Maiti, Chinmay Kumar, Chi, Dong Zhi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3292944/
https://www.ncbi.nlm.nih.gov/pubmed/22297193
http://dx.doi.org/10.1186/1556-276X-7-99

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3292944/
https://www.ncbi.nlm.nih.gov/pubmed/22297193
http://dx.doi.org/10.1186/1556-276X-7-99

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