SiO(x)/SiN(y )multilayers for photovoltaic and photonic applications

Microstructural, electrical, and optical properties of undoped and Nd(3+)-doped SiO(x)/SiN(y )multilayers fabricated by reactive radio frequency magnetron co-sputtering have been investigated with regard to thermal treatment. This letter demonstrates the advantages of using SiN(y )as the alternating sublayer instead of SiO(2). A high density of silicon nanoclusters of the order 10(19 )nc/cm(3 )is achieved in the SiO(x )sublayers. Enhanced conductivity, emission, and absorption are attained at low thermal budget, which are promising for photovoltaic applications. Furthermore, the enhancement of Nd(3+ )emission in these multilayers in comparison with the SiO(x)/SiO(2 )counterparts offers promising future photonic applications. PACS: 88.40.fh (Advanced materials development), 81.15.cd (Deposition by sputtering), 78.67.bf (Nanocrystals, nanoparticles, and nanoclusters).