A general lithography-free method of microscale/nanoscale fabrication and patterning on Si and Ge surfaces

Here, we introduce and give an overview of a general lithography-free method to fabricate silicide and germanide micro-/nanostructures on Si and Ge surfaces through metal-vapor-initiated endoepitaxial growth. Excellent controls on shape and orientation are achieved by adjusting the substrate orienta...

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Detalles Bibliográficos
Autores principales: Wang, Huatao, Wu, Tom
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3305425/
https://www.ncbi.nlm.nih.gov/pubmed/22315969
http://dx.doi.org/10.1186/1556-276X-7-110

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3305425/
https://www.ncbi.nlm.nih.gov/pubmed/22315969
http://dx.doi.org/10.1186/1556-276X-7-110

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