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A general lithography-free method of microscale/nanoscale fabrication and patterning on Si and Ge surfaces
Here, we introduce and give an overview of a general lithography-free method to fabricate silicide and germanide micro-/nanostructures on Si and Ge surfaces through metal-vapor-initiated endoepitaxial growth. Excellent controls on shape and orientation are achieved by adjusting the substrate orienta...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2012
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3305425/ https://www.ncbi.nlm.nih.gov/pubmed/22315969 http://dx.doi.org/10.1186/1556-276X-7-110 |