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Formation mechanism of SiGe nanorod arrays by combining nanosphere lithography and Au-assisted chemical etching
The formation mechanism of SiGe nanorod (NR) arrays fabricated by combining nanosphere lithography and Au-assisted chemical etching has been investigated. By precisely controlling the etching rate and time, the lengths of SiGe NRs can be tuned from 300 nm to 1 μm. The morphologies of SiGe NRs were f...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2012
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3305568/ https://www.ncbi.nlm.nih.gov/pubmed/22340729 http://dx.doi.org/10.1186/1556-276X-7-140 |