Se-doping dependence of the transport properties in CBE-grown InAs nanowire field effect transistors

We investigated the transport properties of lateral gate field effect transistors (FET) that have been realized by employing, as active elements, (111) B-oriented InAs nanowires grown by chemical beam epitaxy with different Se-doping concentrations. On the basis of electrical measurements, it was fo...

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Detalles Bibliográficos
Autores principales: Viti, Leonardo, Vitiello, Miriam S, Ercolani, Daniele, Sorba, Lucia, Tredicucci, Alessandro
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3311085/
https://www.ncbi.nlm.nih.gov/pubmed/22373361
http://dx.doi.org/10.1186/1556-276X-7-159

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3311085/
https://www.ncbi.nlm.nih.gov/pubmed/22373361
http://dx.doi.org/10.1186/1556-276X-7-159

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