III-V/Si hybrid photonic devices by direct fusion bonding

Monolithic integration of III-V compound semiconductors on silicon is highly sought after for high-speed, low-power-consumption silicon photonics and low-cost, light-weight photovoltaics. Here we present a GaAs/Si direct fusion bonding technique to provide highly conductive and transparent heterojun...

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Detalles Bibliográficos
Autores principales: Tanabe, Katsuaki, Watanabe, Katsuyuki, Arakawa, Yasuhiko
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2012
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3317235/
https://www.ncbi.nlm.nih.gov/pubmed/22470842
http://dx.doi.org/10.1038/srep00349

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3317235/
https://www.ncbi.nlm.nih.gov/pubmed/22470842
http://dx.doi.org/10.1038/srep00349

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