SiC surface orientation and Si loss rate effects on epitaxial graphene

We have explored the properties of SiC-based epitaxial graphene grown in a cold wall UHV chamber. The effects of the SiC surface orientation and silicon loss rate were investigated by comparing the characteristics of each formed graphene. Graphene was grown by thermal decomposition on both the silic...

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Detalles Bibliográficos
Autores principales: Kim, Moonkyung, Hwang, Jeonghyun, Shields, Virgil B, Tiwari, Sandip, Spencer, Michael G, Lee, Jo-Won
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Idea
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3323459/
https://www.ncbi.nlm.nih.gov/pubmed/22410299
http://dx.doi.org/10.1186/1556-276X-7-186

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3323459/
https://www.ncbi.nlm.nih.gov/pubmed/22410299
http://dx.doi.org/10.1186/1556-276X-7-186

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