Junction formation of Cu(3)BiS(3) investigated by Kelvin probe force microscopy and surface photovoltage measurements

Recently, the compound semiconductor Cu(3)BiS(3) has been demonstrated to have a band gap of ~1.4 eV, well suited for photovoltaic energy harvesting. The preparation of polycrystalline thin films was successfully realized and now the junction formation to the n-type window needs to be developed. We...

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Detalles Bibliográficos
Autores principales: Mesa, Fredy, Chamorro, William, Vallejo, William, Baier, Robert, Dittrich, Thomas, Grimm, Alexander, Lux-Steiner, Martha C, Sadewasser, Sascha
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2012
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3323917/
https://www.ncbi.nlm.nih.gov/pubmed/22497001
http://dx.doi.org/10.3762/bjnano.3.31

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3323917/
https://www.ncbi.nlm.nih.gov/pubmed/22497001
http://dx.doi.org/10.3762/bjnano.3.31

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