Effect of non-lattice oxygen on ZrO(2)-based resistive switching memory

ZrO(2)-based resistive switching memory has attracted much attention according to its possible application in the next-generation nonvolatile memory. The Al/ZrO(2)/Pt resistive switching memory with bipolar resistive switching behavior is revealed in this work. The thickness of the ZrO(2 )film is on...

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Detalles Bibliográficos
Autores principales: Lin, Chun-Chieh, Chang, Yi-Peng, Lin, Huei-Bo, Lin, Chu-Hsuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3324381/
https://www.ncbi.nlm.nih.gov/pubmed/22416817
http://dx.doi.org/10.1186/1556-276X-7-187

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3324381/
https://www.ncbi.nlm.nih.gov/pubmed/22416817
http://dx.doi.org/10.1186/1556-276X-7-187

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